Plessey announced today that it will be presenting at the 11th International Conference On Nitride Semiconductors (ICNS-11) on 1st of September, 2015.The ICNS will showcase high impact scientific and technological advances in materials and devices based on group-III nitride semiconductors. The conference is featured by plenary sessions, parallel topical sessions, individual presentations and an industrial exhibition.
Plessey’s proprietary epitaxy structure enables high quality, crack-free material to be grown with a relatively thin epi thickness of 3.75μm on 150mm Si substrate, resulting in significant growth time savings and process throughput with results that also attests to the feasibility of GaN-on-Silicon technology for solid state lighting applications.
Plessey’s Senior Engineer, Liyang Zhang, said, “The ICNS is the largest GaN conference in Asia and there will be some very influential speakers, including Hiroshi Amano and Shuji Nakamura, both Nobel Prize Winners in Physics. This conference will be a great platform for Plessey to present high impact technological and manufacturing advances in blue GaN-on-Silicon LEDs. It will also be a good opportunity for Plessey to promote further cooperation with the Asian market.”
Plessey’s presentation will take place on Tuesday 1st Sep 2015 from 18:00pm to 20:00pm (Area No.TuGP98).The biennial conference is a series one, following the first conference held in Nagoya, Japan (TWN’95); the second in Tokushima, Japan (ICNS-2); the third in Montpellier, France (ICNS-3); the fourth in Denver, USA (ICNS-4); the fifth in Nara, Japan (ICNS-5); the sixth in Bremen, Germany (ICNS-6); the seventh in Las Vegas, USA (ICNS-7); the eighth in Jeju, Korea (ICNS-8); the ninth in Glasgow, UK (ICNS-9); and the tenth in Washington D.C. USA (ICNS-10).